类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 2.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.7Ohm @ 1.2A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 37W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM15N650T2Rectron USA |
MOSFET N-CH 650V 15A TO220-3 |
|
BUK9M6R0-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
AUIRF1405ZS-7TRLRochester Electronics |
MOSFET N-CH 55V 120A D2PAK |
|
SQ2301ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.9A TO236 |
|
TPH8R80ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 32A 8-SOP |
|
FQAF12P20Rochester Electronics |
MOSFET P-CH 200V 8.6A TO3PF |
|
IRFB4321PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 85A TO220AB |
|
SIR124DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 16.1A/56.8A PPAK |
|
IPA60R280C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO220-FP |
|
SI4348DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8A 8SO |
|
SIA485DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 1.6A PPAK SC70 |
|
BUZ30AHRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
APT8015JVRRoving Networks / Microchip Technology |
MOSFET N-CH 800V 44A ISOTOP |