English
简体中文
CRYSTAL 30.0000MHZ 10PF SMD
MOSFET N-CH 150V 130A TO247
RAIL-TO-RAIL I/O COMPARATOR
TERM BLK 24POS TOP ENTRY 5MM PCB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 70A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 87 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4770 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQAF16N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.3A TO3PF |
|
DMP3018SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.5/25A 8SO T&R |
|
SI8812DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICROFOOT |
|
TSM230N06PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 44A 8PDFN |
|
PMZB320UPE,315Rochester Electronics |
NOW NEXPERIA PMZB320UPE - SMALL |
|
SFP9610Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDG328PRochester Electronics |
MOSFET P-CH 20V 1.5A SC88 |
|
HUF75831SK8TRochester Electronics |
MOSFET N-CH 150V 3A 8SOIC |
|
FQPF4N50Rochester Electronics |
MOSFET N-CH 500V 2.3A TO220F |
|
IPP90R800C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 6.9A TO220-3-1 |
|
IPLK60R1K5PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.8A THIN-PAK |
|
IRFU3910PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 16A IPAK |
|
AUIRFR4292Rochester Electronics |
MOSFET N-CH 250V 9.3A DPAK |