







MOSFET N-CH 40V 15A/50A 8VSON
CONN BACKSHELL 9P 90DEG SHLD SLV
IC REG LINEAR 4.6V 150MA SNT6A
IC REG LIN 1.1V 150MA DFN0808-4
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 50A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.6mOhm @ 17A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1656 pF @ 20 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta), 77W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSONP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
HUF76013P3Rochester Electronics |
MOSFET N-CH 20V 20A TO220-3 |
|
|
STF7N95K3STMicroelectronics |
MOSFET N-CH 950V 7.2A TO220FP |
|
|
IAUC100N04S6N015ATMA1IR (Infineon Technologies) |
IAUC100N04S6N015ATMA1 |
|
|
NVMFS6H836NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 15A/74A 5DFN |
|
|
FDT3N40TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 2A SOT223-4 |
|
|
DMP2120U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.8A SOT23 T&R 1 |
|
|
FCA20N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20A TO3PN |
|
|
BUK764R2-80E,118Rochester Electronics |
MOSFET N-CH 80V 120A D2PAK |
|
|
NTD4806N-35GRochester Electronics |
MOSFET N-CH 30V 11.3A/79A IPAK |
|
|
NVMYS7D3N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 17A/52A 4LFPAK |
|
|
IPI600N25N3GRochester Electronics |
IPI600N25 - 12V-300V N-CHANNEL P |
|
|
SQ2318BES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 8A SOT23-3 |
|
|
NTMFS5C450NLT1GRochester Electronics |
MOSFET N-CH 40V 27A/110A 5DFN |