English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4.4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM150N100T2Rectron USA |
MOSFET N-CH 100V 150A TO220-3 |
|
NDS355NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.6A SUPERSOT3 |
|
CSD18563Q5ATTexas Instruments |
MOSFET N-CH 60V 100A 8VSON |
|
SQJ444EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IXFR44N50PWickmann / Littelfuse |
MOSFET N-CH 500V 24A ISOPLUS247 |
|
RSR020P05TLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
STL3NM60NSTMicroelectronics |
MOSFET N-CH 600V 0.65A POWERFLAT |
|
SIR800DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
|
IRFB4020PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO220AB |
|
SPB12N50C3ATMA1Rochester Electronics |
MOSFET N-CH 560V 11.6A TO263-3 |
|
IAUZ20N08S5L300ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 20A 8TSDSON-32 |
|
DMG3406L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.6A SOT23 |
|
HUF75639S3SRochester Electronics |
MOSFET N-CH 100V 56A D2PAK |
