类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 35A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 12mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 20µA |
栅极电荷 (qg) (max) @ vgs: | 7.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 420 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 28W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 4-LFPAK |
包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTE2973NTE Electronics, Inc. |
MOSFET-N-CHAN ENHANCEMENT TO-3P |
|
APT30M40JVRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 70A ISOTOP |
|
IXFH42N50P2Wickmann / Littelfuse |
MOSFET N-CH 500V 42A TO247AD |
|
TK100A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 100A TO220SIS |
|
CSD23285F5Texas Instruments |
MOSFET P-CH 12V 5.4A 3PICOSTAR |
|
SPW47N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 47A TO247-3 |
|
IRFS7534TRL7PPIR (Infineon Technologies) |
MOSFET N CH 60V 240A D2PAK |
|
SI1404BDH-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 1.9A/2.37A SC70 |
|
SSR2N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLR3110ZPBFRochester Electronics |
MOSFET N-CH 100V 42A DPAK |
|
BUK9M19-60EXNexperia |
MOSFET N-CH 60V 38A LFPAK33 |
|
BUK7Y13-40B,115Nexperia |
MOSFET N-CH 40V 58A LFPAK56 |
|
IPP05CN10NGXKRochester Electronics |
N-CHANNEL POWER MOSFET |