类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.6mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 77 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 5000 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta), 136W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDD3670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 34A TO252 |
|
FDMC8327LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12A/14A 8MLP |
|
IRF5802TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 900MA MICRO6 |
|
FDPF51N25RDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 51A TO220F |
|
DMP2109UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.7A TSOT26 |
|
NVR4501NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23-3 |
|
BSC010N04LSCATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
CSD25481F4Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
IRFD310Rochester Electronics |
0.4A 400V 3.600 OHM N-CHANNEL |
|
SFT1341-WRochester Electronics |
SFT1341-W |
|
IXFN44N80PWickmann / Littelfuse |
MOSFET N-CH 800V 39A SOT-227B |
|
ZXMP7A17KQTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 3.8A TO252 |
|
SSM3K36MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 500MA VESM |