English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 15 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.45 nC @ 10 V |
| vgs (最大值): | +2V, -15V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 791mW (Ta) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR2908TRLPBF-INFRochester Electronics |
IRLR2908 - HEXFET POWER MOSFET |
|
AOD413AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 12A TO252 |
|
NTP75N03-006Rochester Electronics |
MOSFET N-CH 30V 75A TO220AB |
|
FDS6679ZRochester Electronics |
MOSFET P-CH 30V 13A 8SOIC |
|
SQJ148EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 15A PPAK SO-8 |
|
SPW32N50C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 32A TO247-3 |
|
IXFX120N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 120A PLUS247-3 |
|
DMTH4007LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 15.5A PWRDI5060 |
|
BFL4036-1ERochester Electronics |
MOSFET N-CH 500V 9.6A TO220F-3FS |
|
TK14A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 14A TO220SIS |
|
IRL640PBFVishay / Siliconix |
MOSFET N-CH 200V 17A TO220AB |
|
IPW90R340C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO247-3 |
|
FQD13N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK |
