类型 | 描述 |
---|---|
系列: | MDmesh™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 6.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.05Ohm @ 3.25A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 620 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS4936NCT1GRochester Electronics |
11.6A, 30V, 0.0048OHM, N-CHANNE |
|
IPI90R1K0C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFR5505TRLRochester Electronics |
MOSFET P-CH 55V 18A DPAK |
|
IPA60R650CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7A TO220-FP |
|
IPD053N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
R5016ANJTLROHM Semiconductor |
MOSFET N-CH 500V 16A LPTS |
|
AON6796Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 32A/70A 8DFN |
|
IPB048N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 120A TO263-3 |
|
SI1403BDL-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 1.5A SC70-6 |
|
NVTR4502PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT23-3 |
|
DMT10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 41.2A TO252 T&R |
|
IRF353Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM4424CS RVGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 8A 8SOP |