English
简体中文
SMALL SIGNAL N-CHANNEL MOSFET
IC FLASH 512MBIT SPI/QUAD 16SOIC
EXT O= .125,L= .50,W= .016
SOC/SIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SISA72DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK1212-8 |
|
IXKH47N60CWickmann / Littelfuse |
MOSFET N-CH 600V 47A TO247AD |
|
IPB65R110CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A D2PAK |
|
APT56F50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 56A T-MAX |
|
STW45N60DM6STMicroelectronics |
MOSFET N-CH 600V 30A TO247 |
|
IPP90R1K0C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.7A TO220-3-1 |
|
STW30NM60NSTMicroelectronics |
MOSFET N-CH 600V 25A TO247-3 |
|
SIRA28BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A/38A PPAK SO8 |
|
STD2N62K3STMicroelectronics |
MOSFET N-CH 620V 2.2A DPAK |
|
APT58M50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
SI7884BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
|
FQA6N90C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 6A TO3PN |
|
STF11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A TO220FP |