English
简体中文
CAP ALUM 560UF 250V 5000H
MOSFET N-CH 250V 140A PLUS247-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GigaMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 140A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 17mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 255 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 19000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 960W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 46.3A TO252 T&R |
|
SIHF6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO220 |
|
APT53F80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 57A ISOTOP |
|
SIHG47N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 43A TO247AC |
|
AOT5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220 |
|
FDMC8010DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 37A 8PQFN |
|
APT6021SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A D3PAK |
|
SUD15N15-95-E3Vishay / Siliconix |
MOSFET N-CH 150V 15A TO252 |
|
SI7370DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
FQA38N30Rochester Electronics |
38.4A, 300V, N-CHANNEL, MOSFET |
|
IPI80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
NVMFS6B25NLT1GRochester Electronics |
MOSFET N-CH 100V 8A/33A 5DFN |
|
APT12080LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 16A TO264 |