类型 | 描述 |
---|---|
系列: | GigaMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 140A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 17mOhm @ 60A, 10V |
vgs(th) (最大值) @ id: | 5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 255 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 19000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 960W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PLUS247™-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMTH10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 46.3A TO252 T&R |
|
SIHF6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO220 |
|
APT53F80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 57A ISOTOP |
|
SIHG47N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 43A TO247AC |
|
AOT5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220 |
|
FDMC8010DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 37A 8PQFN |
|
APT6021SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A D3PAK |
|
SUD15N15-95-E3Vishay / Siliconix |
MOSFET N-CH 150V 15A TO252 |
|
SI7370DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
FQA38N30Rochester Electronics |
38.4A, 300V, N-CHANNEL, MOSFET |
|
IPI80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
NVMFS6B25NLT1GRochester Electronics |
MOSFET N-CH 100V 8A/33A 5DFN |
|
APT12080LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 16A TO264 |