类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | 21.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPP230N06L3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDC631NRochester Electronics |
MOSFET N-CH 20V 4.1A SUPERSOT6 |
|
IXTT40N50L2Wickmann / Littelfuse |
MOSFET N-CH 500V 40A TO268 |
|
NTD18N06-001Rochester Electronics |
MOSFET N-CH 60V 18A IPAK |
|
IXTP10P50PWickmann / Littelfuse |
MOSFET P-CH 500V 10A TO220AB |
|
IPB160N04S203ATMA4Rochester Electronics |
MOSFET N-CH 40V 160A TO263-7-3 |
|
TSM650P03CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 4.1A SOT23 |
|
RSQ020N03TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT6 |
|
IRF7601PBFRochester Electronics |
MOSFET N-CH 20V 5.7A MICRO8 |
|
NTMFS6B03NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 19A/132A 5DFN |
|
IRF820LPBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A I2PAK |
|
FQD5N30TFRochester Electronics |
MOSFET N-CH 300V 4.4A DPAK |
|
STD10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A DPAK |