English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 35.4A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 650µA |
| 栅极电荷 (qg) (max) @ vgs: | 35.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2410 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 59W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP60R250CPXKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB15N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 15A TO263 |
|
IXFX64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 64A PLUS247-3 |
|
TK58E06N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 58A TO220 |
|
BSB013NE2LXIXUMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 36A/163A 2WDSON |
|
IRFP4668PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 130A TO247AC |
|
APT30M36LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 84A TO264 |
|
IXFT12N90QWickmann / Littelfuse |
MOSFET N-CH 900V 12A TO268 |
|
FDMS86101Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.4A/60A 8PQFN |
|
IRF1010ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
RCX450N20ROHM Semiconductor |
MOSFET N-CH 200V 45A TO220FM |
|
MGSF3454XT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPB60R099C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A D2PAK |
