类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 49 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1630 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 5W (Ta), 62.5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSS123WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SC70 |
|
CSD18510Q5BTexas Instruments |
MOSFET N-CH 40V 300A 8VSON |
|
AOB4184Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 12A/50A TO263 |
|
IPB100N06S205ATMA4IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
SCH1331-S-TL-HRochester Electronics |
MOSFET P-CH 12V 3A SCH6 |
|
NTD50N03R-35GRochester Electronics |
MOSFET N-CH 25V 7.8A/45A IPAK |
|
IXFN64N50PWickmann / Littelfuse |
MOSFET N-CH 500V 61A SOT227B |
|
SI7415DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.6A PPAK1212-8 |
|
SI3476DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 4.6A 6TSOP |
|
IXTZ550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A DE475 |
|
STL5N80K5STMicroelectronics |
MOSFET N-CH 800V 3A PWRFLAT VHV |
|
FDD5353Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11.5A/50A DPAK |
|
IPD65R600E6ATMA1Rochester Electronics |
IPD65R600 - COOLMOS N-CHANNEL |