English
简体中文
ERL-20 267 1% T-1 RLR20C2670FS R
MOSFET N-CH 600V 12A TO262F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 520mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2028 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262F |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP070AN06A0Rochester Electronics |
MOSFET N-CH 60V 15A/80A TO220-3 |
|
BSC252N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 7.2A/40A TDSON |
|
IPA60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220 |
|
NTB12N50T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD60R600E6ATMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
FQP9N25Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI540GPBFVishay / Siliconix |
MOSFET N-CH 100V 17A TO220-3 |
|
IPB020NE7N3GRochester Electronics |
IPB020NE7 - 12V-300V N-CHANNEL P |
|
NTD4904N-1GRochester Electronics |
MOSFET N-CH 30V 13A/79A IPAK |
|
PMCM4401VNEAZNexperia |
MOSFET N-CH 12V 4.7A 4WLCSP |
|
FDS6685Rochester Electronics |
MOSFET P-CH 30V 8.8A 8SOIC |
|
STD2HNK60ZSTMicroelectronics |
MOSFET N-CH 600V 2A DPAK |
|
NTR2101PT1GRochester Electronics |
SINGLE P-CHANNEL SMALL SIGNAL MO |