English
简体中文
MOSFET N-CH 40V 37.6A/133A PPAK
KIMYA PETG-S 1.75MM 750G CLEAR Y
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 37.6A (Ta), 133A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.96mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 4270 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP140NF75STMicroelectronics |
MOSFET N-CH 75V 120A TO220AB |
|
NTD5C688NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.5A/17A DPAK |
|
NVMYS3D5N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A LFPAK4 |
|
SN7002WH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT323-3 |
|
SUM110P08-11L-E3Vishay / Siliconix |
MOSFET P-CH 80V 110A TO263 |
|
NTTD4401FR2GRochester Electronics |
MOSFET P-CH 20V 2.4A MICRO8 |
|
DMT31M7LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 30A PWRDI5060 |
|
IPP037N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
IRFP4127PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 75A TO247AC |
|
IRLR3410TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
IRF510STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO263 |
|
SCH1433-TL-WRochester Electronics |
MOSFET N-CH 20V 3.5A SOT563/SCH6 |
|
PMV55ENEARNexperia |
MOSFET N-CH 60V 3.1A TO236AB |