类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSC40SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 55A SOT227 |
|
IPD60R385CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO252-3 |
|
RFP6P10Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVTFS5811NLTAGRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SI7430DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
|
NDT3055Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4 |
|
VP0106N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 250MA TO92-3 |
|
AUIRF6215Rochester Electronics |
MOSFET P-CH 150V 13A TO220AB |
|
NTD40N03RT4Rochester Electronics |
MOSFET N-CH 25V 7.8A/32A DPAK |
|
NVD5C684NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 38A DPAK |
|
SSM3K15AFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |
|
RQ5C020TPTLROHM Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |
|
IXTH64N65XWickmann / Littelfuse |
MOSFET N-CH 650V 64A TO247 |