类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1700 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 18V |
rds on (max) @ id, vgs: | 1.5Ohm @ 1.1A, 18V |
vgs(th) (最大值) @ id: | 4V @ 410µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 18 V |
vgs (最大值): | +22V, -6V |
输入电容 (ciss) (max) @ vds: | 184 pF @ 800 V |
场效应管特征: | - |
功耗(最大值): | 44W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-268 |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTH13N80Wickmann / Littelfuse |
MOSFET N-CH 800V 13A TO247 |
|
FDMS0300SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
FDD5N50TFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIR624DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 18.6A PPAK SO-8 |
|
NTLUS3C18PZTBGRochester Electronics |
MOSFET P-CH 12V 4.4A 6UDFN |
|
STN1NF20STMicroelectronics |
MOSFET N-CH 200V 1A SOT-223 |
|
PMV100XPEA,215Rochester Electronics |
MOSFET P-CH 20V 2.4A TO236AB |
|
STB22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A D2PAK |
|
DMP6185SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 9.4A TO252 |
|
NVMFS5C604NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
|
CDM22010-650 SLCentral Semiconductor |
MOSFET N-CH 650V 10A TO220 |
|
SI6413DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 7.2A 8TSSOP |
|
CPH3448-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 4A 3CPH |