类型 | 描述 |
---|---|
系列: | POWER MOS 8™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 630mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 8370 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1040W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | T-MAX™ [B2] |
包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFD123PBFVishay / Siliconix |
MOSFET N-CH 100V 1.3A 4DIP |
|
DMN3018SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.5A PWRDI3333-8 |
|
SIB441EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |
|
NTD4809NH-1GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
IPS80R1K4P7Rochester Electronics |
IPS80R1K4 - 800V COOLMOS N-CHANN |
|
IPA50R399CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 9A TO220-FP |
|
DMP2021UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 9A 6UDFN |
|
CSD17559Q5Rochester Electronics |
CSD17559Q5 30V, N CHANNEL NEXFET |
|
FDB86360-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 110A D2PAK |
|
AON2411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 20A 8DFN |
|
BSS138KSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23-3 |
|
TSM180P03CS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 10A 8SOP |
|
AUIRF1324SRochester Electronics |
MOSFET N-CH 24V 195A D2PAK |