English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 65A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 69mOhm @ 40A, 20V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 122 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 1900 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 318W (Tc) |
| 工作温度: | -55°C ~ 200°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | HiP247™ |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD13302WTexas Instruments |
MOSFET N-CH 12V 1.6A 4DSBGA |
|
STP11NM60FDFPSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
STF18N60DM2STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
IRFB42N20DPBFRochester Electronics |
CHANNEL |
|
IRFS4310ZPBFRochester Electronics |
MOSFET N-CH 100V 120A D2PAK |
|
FDS9400ASanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.4A 8SOIC |
|
BSS138LT7GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 200MA SOT23-3 |
|
SUD50P06-15-BE3Vishay / Siliconix |
MOSFET P-CH 60V 50A DPAK |
|
AOT13N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 13A TO220 |
|
TPH1500CNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 150V 38A 8SOP |
|
MMFTN138Diotec Semiconductor |
MOSFET N-CH 50V 220MA SOT23-3 |
|
AOT11S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO220 |
|
APT20M45SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 56A D3PAK |
