类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Ta), 76A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.5mOhm @ 24A, 10V |
vgs(th) (最大值) @ id: | 2.35V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3.1 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZDX050N50ROHM Semiconductor |
MOSFET N-CH 500V 5A TO220FM |
|
FDMS8350LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 47A/200A POWER56 |
|
STW69N65M5STMicroelectronics |
MOSFET N-CH 650V 58A TO247 |
|
SCT2H12NZGC11ROHM Semiconductor |
SICFET N-CH 1700V 3.7A TO3PFM |
|
XP231N02013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 200MA SOT323-3 |
|
GA05JT03-46GeneSiC Semiconductor |
TRANS SJT 300V 9A TO46 |
|
SI7619DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 24A PPAK1212-8 |
|
SQP10250E_GE3Vishay / Siliconix |
MOSFET N-CH 250V 53A TO220AB |
|
RM2N650IPRectron USA |
MOSFET N-CHANNEL 650V 2A TO251 |
|
IRLR024NPBFRochester Electronics |
MOSFET N-CH 55V 17A DPAK |
|
CPH3362-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 700MA 3CPH |
|
C3M0040120KWolfspeed - a Cree company |
1200V 40MOHM SIC MOSFET |
|
NDD04N50ZT4GRochester Electronics |
MOSFET N-CH 500V 3A DPAK |