English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 175mOhm @ 6.6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 350 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJA96EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
PSMN041-80YLXNexperia |
MOSFET N-CH 80V 25A LFPAK56 |
|
ECH8310-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 9A 8ECH |
|
NTD4858N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
SQ2319ADS-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 4.6A SOT23-3 |
|
IRFP9140NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO247AC |
|
IXFN102N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A SOT227B |
|
NVMFS6H800NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 30A/224A 5DFN |
|
STFI13N95K3STMicroelectronics |
MOSFET N CH 950V 10A I2PAKFP |
|
IPP80R1K2P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4.5A TO220-3 |
|
STD134N4F7AGSTMicroelectronics |
MOSFET N-CHANNEL 40V 80A DPAK |
|
IPDD60R080G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 29A HDSOP-10 |
|
DMP3165L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.3A SOT23 T&R |
