类型 | 描述 |
---|---|
系列: | MDmesh™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 295mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 800 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RCJ700N20TLROHM Semiconductor |
MOSFET N-CH 200V 70A LPTS |
|
AUIRFZ34NRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPW65R041CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 68.5A TO247-3 |
|
AON4703Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 3.4A 8DFN |
|
TK72E12N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 120V 72A TO-220 |
|
ZXMP10A13FTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 600MA SOT23-3 |
|
NVMFS5113PLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 10A/64A 5DFN |
|
IRF630PBFVishay / Siliconix |
MOSFET N-CH 200V 9A TO220AB |
|
RT1A060APTRROHM Semiconductor |
MOSFET P-CH 12V 6A 8TSST |
|
STP20NM60FPSTMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
PSMN7R0-30YL115/BKNRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN3042L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.8A SOT23 |
|
IRFH7787TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 68A PQFN |