English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 600mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 900mOhm @ 430mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 175 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 550mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFB20N50KPBFVishay / Siliconix |
MOSFET N-CH 500V 20A TO220AB |
|
STFU13N80K5STMicroelectronics |
MOSFET N-CH 800V 12A TO220FP |
|
IPB093N04LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLR8721TRPBF-IRRochester Electronics |
HEXFET POWER MOSFET |
|
PSMN8R5-108ES127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
XP235N2001TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 2A SOT23 |
|
IXFB110N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 110A PLUS264 |
|
AOWF15S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO262F |
|
FCPF260N60ERochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, N |
|
RJK60S5DPE-00#J3Rochester Electronics |
MOSFET N-CH 600V 20A 4LDPAK |
|
NTR4003NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 500MA SOT23-3 |
|
IRLS3034PBFRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
IRFR320TRPBFVishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
