RELAY GEN PURPOSE 3PDT 10A 48V
MOSFET N-CH 600V 37.9A TO247-3
类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 37.9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 99mOhm @ 18.1A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 1.21mA |
栅极电荷 (qg) (max) @ vgs: | 119 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2660 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 278W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTK140N20PWickmann / Littelfuse |
MOSFET N-CH 200V 140A TO264 |
|
STL8P2UH7STMicroelectronics |
MOSFET P-CH 20V 8A POWERFLAT |
|
FQPF19N20Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IPA70R450P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10A TO220 |
|
NXV40UNRNexperia |
NXV40UN/SOT23/TO-236AB |
|
R6024KNXROHM Semiconductor |
MOSFET N-CH 600V 24A TO220FM |
|
FQA10N80Rochester Electronics |
MOSFET N-CH 800V 9.8A TO3P |
|
STH270N8F7-6STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK |
|
SCT3022ALGC11ROHM Semiconductor |
SICFET N-CH 650V 93A TO247N |
|
IPD70N10S3L12ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO252-3 |
|
NVHL082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO247-3 |
|
MSC035SMA070SRoving Networks / Microchip Technology |
MOSFET N-CH 700V D3PAK |
|
FDS86140Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 11.2A 8SOIC |