English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Linear L2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 103 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 357W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFR2905ZTRLRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
SIHD3N50D-BE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
APT31M100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 32A T-MAX |
|
G2R1000MT17JGeneSiC Semiconductor |
SIC MOSFET N-CH 3A TO263-7 |
|
IXTY4N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 4A TO252 |
|
SN7002WH6433XTMA1Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQPF5N90Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 3A TO220F |
|
FCU4300N80ZRochester Electronics |
MOSFET N-CH 800V 1.6A I-PAK |
|
SQ3425EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 20V 7.4A SOT23-3 |
|
FDT459NRochester Electronics |
6.5A, 30V, 0.035OHM, N-CHANNEL, |
|
IPI80N06S207AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
R6011KND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 11A TO252 |
|
DMP6110SFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 4.2A 6UDFN |
