English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 59A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1200 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4W (Ta), 40W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFU7546PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 56A IPAK |
|
GA10SICP12-263GeneSiC Semiconductor |
TRANS SJT 1200V 25A D2PAK |
|
PMV48XPA2RNexperia |
MOSFET P-CH 20V 4A TO236AB |
|
FQPF12N60C-FSRochester Electronics |
12A, 600V, 0.65OHM, N-CHANNEL, |
|
TSM2328CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 1.5A SOT23 |
|
AONS36314Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 36.5A/85A 8DFN |
|
SQD50P03-07_GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A TO252AA |
|
BSP315Rochester Electronics |
MOSFET P-CH 50V 1A SOT223 |
|
IXTP32N65XWickmann / Littelfuse |
MOSFET N-CH 650V 32A TO220-3 |
|
IRFB4615PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 35A TO220AB |
|
TK35N65W5,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 35A TO247 |
|
DMP2240UWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 1.5A SOT323 |
|
IXTP08N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO220AB |
