English
简体中文
MOSFET N-CH 20V 6.2A TSOT-26
WIRE MARKR CBL TIE 15MMX70MM WHT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 24mOhm @ 6.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.4 nC @ 8 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 887 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.15W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSOT-26 |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD24N06-1GRochester Electronics |
MOSFET N-CH 60V 24A IPAK |
|
PMN70XPEAXRochester Electronics |
MOSFET P-CH 20V 3.2A 6TSOP |
|
STB18N60M6STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
|
ISZ065N03L5SATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A TSDSON |
|
RQ5H020SPTLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
SIHG33N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 31.6A TO247AC |
|
SIS178LDN-T1-GE3Vishay / Siliconix |
N-CHANNEL 70 V (D-S) MOSFET POWE |
|
IRFR220BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL620ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS6H858NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.4A/29A 5DFN |
|
BFL4037-1ERochester Electronics |
MOSFET N-CH 500V 11A TO220F-3FS |
|
DMT6005LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
SIR871DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 48A PPAK SO-8 |