English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 90mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6020JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
SI2304DS,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FDD16AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 9A/50A DPAK |
|
FCD2250N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 2.6A DPAK |
|
IXFQ94N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 94A TO3P |
|
DMNH3010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A/55A TO252-4L |
|
FCP165N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220-3 |
|
NDD05N50Z-1GRochester Electronics |
MOSFET N-CH 500V 4.7A IPAK |
|
STL2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A POWERFLAT |
|
AUIRFSA8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 523A D2PAK |
|
IXTR140P10TWickmann / Littelfuse |
MOSFET P-CH 100V 110A ISOPLUS247 |
|
STB6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A D2PAK |
|
FQD1N60CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1A DPAK |
