类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 370mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 4.2Ohm @ 190mA, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 0.84 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 24.1 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 600mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-70FL/MCPH3 |
包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSD140P06TLROHM Semiconductor |
MOSFET P-CH 60V 14A CPT3 |
|
FQPF6N80TRochester Electronics |
MOSFET N-CH 800V 3.3A TO220F |
|
DMN10H120SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 3.8A PWRDI3333 |
|
SCT3022KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 95A TO247N |
|
FDC638PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.5A SUPERSOT6 |
|
BUZ31HXKSA1Rochester Electronics |
MOSFET N-CH 200V 14.5A TO220-3 |
|
STL8N6LF6AGSTMicroelectronics |
MOSFET N-CH 60V 32A POWERFLAT |
|
IXFT60N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 60A TO268 |
|
SQD50N06-09L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
|
STP34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A TO220 |
|
BSS87H6327FTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 260MA SOT89-4 |
|
RZF013P01TLROHM Semiconductor |
MOSFET P-CH 12V 1.3A TUMT3 |
|
AUIRFS3607Rochester Electronics |
MOSFET N-CH 75V 80A D2PAK |