English
简体中文
MOSFET N-CH 20V 2A SOT23
SENSOR LINEAR 101.6MM CONNECTOR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 110mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 2.3 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 188 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 600mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4898NFT1GRochester Electronics |
MOSFET N-CH 30V 13.2A/117A 5DFN |
|
STB35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A D2PAK |
|
BSP129H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF9530PBFVishay / Siliconix |
MOSFET P-CH 100V 12A TO220AB |
|
PSMN0R9-25YLDXNexperia |
MOSFET N-CH 25V 300A LFPAK56 |
|
SI4166DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.5A 8SO |
|
FDG311NRochester Electronics |
MOSFET N-CH 20V 1.9A SC88 |
|
STP3NK50ZSTMicroelectronics |
MOSFET N-CH 500V 2.3A TO220AB |
|
IRF1405ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
DMP3017SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11.5A PWRDI3333 |
|
RM40N40LDRectron USA |
MOSFET N-CHANNEL 40V 42A TO252-2 |
|
SSM6K404TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 3A UF6 |
|
BUK6D23-40EXNexperia |
MOSFET N-CH 40V 8A/19A 6DFN |