MOSFET P-CH 85V 96A TO263
PMI .250" LED 120V TAB DIFF GREE
类型 | 描述 |
---|---|
系列: | TrenchP™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 85 V |
电流 - 连续漏极 (id) @ 25°c: | 96A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 13mOhm @ 48A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
vgs (最大值): | ±15V |
输入电容 (ciss) (max) @ vds: | 13100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 298W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (IXTA) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQ3426EV-T1_BE3Vishay / Siliconix |
MOSFET N-CHANNEL 60V 7A 6TSOP |
|
BSZ018NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 23A/40A TSDSON |
|
SISH112DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11.3A PPAK |
|
IRFSL3306PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262 |
|
IPL65R1K5C6SATMA1Rochester Electronics |
MOSFET N-CH 650V 3A THIN-PAK |
|
STB9NK90ZSTMicroelectronics |
MOSFET N-CH 900V 8A D2PAK |
|
IXFT30N85XHVWickmann / Littelfuse |
MOSFET N-CH 850V 30A TO268 |
|
RM35N30DNRectron USA |
MOSFET N-CHANNEL 30V 35A 8DFN |
|
NTB5412NT4GRochester Electronics |
MOSFET N-CH 60V 60A D2PAK |
|
LND01K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 9V 330MA SOT23-5 |
|
FDU6688Rochester Electronics |
MOSFET N-CH 30V 84A IPAK |
|
SI4413ADY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 10.5A 8SO |
|
APT10050LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A TO264 |