English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 11.5V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 11.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3100 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 890mW (Ta), 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB180N04S400ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
SISS65DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 25.9A/94A PPAK |
|
2SK4080-ZK-E1-AYRochester Electronics |
MOSFET N-CH 30V 48A TO252 |
|
IPT111N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 96A 8HSOF |
|
FDB035N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A D2PAK |
|
2SK1620L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW68N60M6STMicroelectronics |
MOSFET N-CH 600V TO247-3 |
|
TK7A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A TO220SIS |
|
IRFF9122Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RTF015P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3 |
|
FDMS86263PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 4.4A/22A 8PQFN |
|
STO67N60DM6STMicroelectronics |
MOSFET N-CH 600V 33A TOLL |
|
BSC160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.8A/42A TDSON |
