English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STW13NK60ZSTMicroelectronics |
MOSFET N-CH 600V 13A TO247-3 |
|
UF3SC120016K4SUnitedSiC |
SICFET N-CH 1200V 107A TO247-4 |
|
IPB65R190CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO263-3 |
|
IXTA48P05T-TRLWickmann / Littelfuse |
MOSFET P-CH 50V 48A TO263 |
|
NVMFS5844NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11.2A 5DFN |
|
STL16N60M2STMicroelectronics |
MOSFET N-CH 600V 8A POWERFLAT HV |
|
SIR484DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 20A PPAK SO-8 |
|
AOTF20N40LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 400V 20A TO220-3F |
|
RAL025P01TCRROHM Semiconductor |
MOSFET P-CH 12V 2.5A TUMT6 |
|
NTMFS4108NT3GRochester Electronics |
MOSFET N-CH 30V 13.5A 5DFN |
|
RQ5E040TNTLROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
|
IPD60R460CEAUMA1IR (Infineon Technologies) |
CONSUMER |
|
FQB20N06TMRochester Electronics |
MOSFET N-CH 60V 20A D2PAK |
