English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.3mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1231 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 107W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHU6N62E-GE3Vishay / Siliconix |
MOSFET N-CH 620V 6A IPAK |
|
APT1201R5BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 10A TO247 |
|
IXTH22N50PWickmann / Littelfuse |
MOSFET N-CH 500V 22A TO247 |
|
IXTN32P60PWickmann / Littelfuse |
MOSFET P-CH 600V 32A SOT227B |
|
IXFN400N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 400A SOT227B |
|
IPA80R310CERochester Electronics |
IPA80R310 - 800V COOLMOS N-CHANN |
|
FDP5690Rochester Electronics |
MOSFET N-CH 60V 32A TO220-3 |
|
TN0610N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
|
IXTA42N15TWickmann / Littelfuse |
MOSFET N-CH 150V 42A TO263 |
|
FQB50N06TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 50A D2PAK |
|
BUK6Y10-30PXNexperia |
MOSFET P-CH 30V 80A LFPAK56 |
|
NVBG160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 19.5A D2PAK |
|
FQB50N06LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 52.4A D2PAK |
