







TRANS SJT N-CH 1200V 19.5A D2PAK
CLEARFIT 28AWG CAT6 PATCH 25FT
ULTRA COMPACT HIGH PERF 3PH WYE
IC LASER DRVR 1.25GB 5.5V 10MSOP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19.5A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 20V |
| rds on (max) @ id, vgs: | 224mOhm @ 12A, 20V |
| vgs(th) (最大值) @ id: | 4.3V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 33.8 nC @ 20 V |
| vgs (最大值): | +25V, -15V |
| 输入电容 (ciss) (max) @ vds: | 678 pF @ 800 V |
| 场效应管特征: | - |
| 功耗(最大值): | 136W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NDT014LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.8A SOT223-4 |
|
|
NVMFS5A160PLZWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
|
FDB3672Rochester Electronics |
MOSFET N-CH 100V 7.2A/44A TO263 |
|
|
FQI50N06LTURochester Electronics |
MOSFET N-CH 60V 52.4A I2PAK |
|
|
DMP4011SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V PWRDI5060 |
|
|
EMH1405-TL-HRochester Electronics |
MOSFET N-CH 30V 8.5A 8EMH |
|
|
SIHJ240N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A PPAK SO-8 |
|
|
IRF7607TRPBFRochester Electronics |
IRF7607 - 12V-300V N-CHANNEL POW |
|
|
EPC2206EPC |
GANFET N-CH 80V 90A DIE |
|
|
PSMN1R0-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
|
IPA50R190CEXKSA2Rochester Electronics |
IPA50R190 - 500V COOLMOS N-CHANN |
|
|
STP3NK80ZSTMicroelectronics |
MOSFET N-CH 800V 2.5A TO220AB |
|
|
SQJA92EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 57A PPAK SO-8 |