类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 175 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 11.323 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 333W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS7064NRochester Electronics |
MOSFET N-CH 30V 16A 8SO |
|
IPB47N10SL-26Rochester Electronics |
IPB47N10 - 75V-100V N-CHANNEL AU |
|
STL13N65M2STMicroelectronics |
MOSFET N-CH 650V 6.5A POWERFLAT |
|
STF140N6F7STMicroelectronics |
MOSFET N-CH 60V 70A TO220FP |
|
DMTH6004SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
AOTF12N30Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 300V 11.5A TO220-3F |
|
IPB80N06S2L11ATMA2Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
TJ10S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 10A DPAK |
|
STU4N62K3STMicroelectronics |
MOSFET N-CH 620V 3.8A IPAK |
|
NXV75UPRNexperia |
NXV75UP/SOT23/TO-236AB |
|
SCT20N120AGSTMicroelectronics |
SICFET N-CH 1200V 20A HIP247 |
|
IPP60R750E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RF1K49156Rochester Electronics |
N-CHANNEL POWER MOSFET |