English
简体中文
MOSFET N-CH 300V 250MA SOT23
FLOOR TILE DISSP WHT 0.125 X12"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 250mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 187.3 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 310mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD2NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 1.85A DPAK |
|
IPW60R125P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO247-3 |
|
UJ3C120070K3SUnitedSiC |
SICFET N-CH 1200V 34.5A TO247-3 |
|
IPW60R190C6FKSA1Rochester Electronics |
IPW60R190 - 600V COOLMOS N-CHANN |
|
TPCA8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 16A 8SOP |
|
VP0808L-GRoving Networks / Microchip Technology |
MOSFET P-CH 80V 280MA TO92-3 |
|
FDMS8672ASRochester Electronics |
MOSFET N-CH 30V 18A/28A 8PQFN |
|
IXTP08N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO220AB |
|
AOT42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 37A TO220 |
|
FQD7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
|
RJK03B9DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
ZXMP6A13FQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 900MA SOT23 |
|
SQ7414AEN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 16A PPAK1212-8 |