English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 3V, 8V |
| rds on (max) @ id, vgs: | 30mOhm @ 4A, 8V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 2.7 nC @ 4.5 V |
| vgs (最大值): | +10V, -8V |
| 输入电容 (ciss) (max) @ vds: | 340 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-WSON (2x2) |
| 包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1HN04CH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 270MA 3CPH |
|
TJ30S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 30A DPAK |
|
VN2222LLRLRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NTR3A052PZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.6A SOT23 |
|
DMN5L06K-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 300MA SOT23-3 |
|
BS270Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 400MA TO92-3 |
|
STF7N80K5STMicroelectronics |
MOSFET N CH 800V 6A TO220FP |
|
NDF06N62ZGRochester Electronics |
MOSFET N-CH 620V 6A TO220FP |
|
IRF7452PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
STB4N62K3STMicroelectronics |
MOSFET N-CH 620V 3.8A D2PAK |
|
IRFU9014PBFVishay / Siliconix |
MOSFET P-CH 60V 5.1A TO251AA |
|
FQB11N40TMRochester Electronics |
MOSFET N-CH 400V 11.4A D2PAK |
|
SIHP35N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 32A TO220AB |
