RES ARRAY 4 RES 68 OHM 1206
2.6 A, 52 V, N-CHANNEL, LOGIC LE
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EPC2020EPC |
GANFET N-CH 60V 90A DIE |
|
IPZ60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO247-4 |
|
STW69N65M5-4STMicroelectronics |
MOSFET N-CH 650V 58A TO247-4L |
|
TPH6R30ANL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 66A/45A 8SOP |
|
FCH041N65EF-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
|
NTMFS5832NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/111A 5DFN |
|
TK31E60X,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |
|
IXFN170N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 170A SOT227B |
|
SK8603140LPanasonic |
MOSFET N-CH 30V 25A 8HSO |
|
IXFH52N30PWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO247AD |
|
STP52N25M5STMicroelectronics |
MOSFET N-CH 250V 28A TO220 |
|
DMP32M6SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 100A PWRDI5060-8 |
|
IXFA20N85XHV-TRLWickmann / Littelfuse |
MOSFET N-CH 850V 20A TO263HV |