类型 | 描述 |
---|---|
系列: | U-MOSVIII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 0.85mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 74 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6900 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 800mW (Ta), 142W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DSOP Advance |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC026NE2LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 24A/82A TDSON |
|
FDMC86116LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.3A/7.5A 8MLP |
|
DMNH6008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.5A PWRDI5060 |
|
FQPF9P25Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 6A TO220F-3 |
|
RQ6C050UNTRROHM Semiconductor |
MOSFET N-CH 20V 5A TSMT6 |
|
BSS138LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 200MA SOT23-3 |
|
IRFF131Rochester Electronics |
MOSFET N-CH 80V 8A TO205AF |
|
IXFP8N85XMWickmann / Littelfuse |
MOSFET N-CH 850V 8A TO220 |
|
BUK752R7-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
DMN1004UFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 70A POWERDI3333 |
|
IPB025N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
TQM050NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/104A PDFN56U |
|
HAT2050T-EL-ERochester Electronics |
N-CHANNEL POWER MOSFET |