English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 2mA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4540 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK624R5-30C,118Rochester Electronics |
PFET, 90A I(D), 30V, 0.0075OHM, |
|
TK72A08N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 80A TO220SIS |
|
PMN230ENEXNexperia |
MOSFET N-CH 60V 1.6A 6TSOP |
|
AUIRFS8403TRLRochester Electronics |
MOSFET N-CH 40V 123A D2PAK |
|
SI3458BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 4.1A 6TSOP |
|
2SK1419Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM60N380CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 11A TO220 |
|
IXTA160N10T7Wickmann / Littelfuse |
MOSFET N-CH 100V 160A TO263-7 |
|
IRF2807ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 75A D2PAK |
|
IXTA1R6N100D2-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO263 |
|
DMP2004WK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 400MA SOT323 |
|
IXTT64N25PWickmann / Littelfuse |
MOSFET N-CH 250V 64A TO268 |
|
PMN30UNEXNexperia |
MOSFET N-CH 20V 4.8A 6TSOP |
