English
简体中文
BATTERY NICAD 1.2V 1.7AH SC
MOSFET N-CH 60V 17A/100A 8VSON
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.9mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2750 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.2W (Ta), 116W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSONP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA65R099C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 38A TO220 |
|
MCQ12N06-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 12A 8SOP |
|
PMPB95ENEAXNexperia |
MOSFET N-CH 80V 2.8A DFN2020MD-6 |
|
IRL6283MTRPBFRochester Electronics |
DIRECTFET N-CHANNEL POWER MOSFET |
|
SI2316BDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 4.5A SOT23-3 |
|
FDMA7632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 6MICROFET |
|
GA10JT12-263GeneSiC Semiconductor |
TRANS SJT 1200V 25A |
|
FDMS86183Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 51A 8PQFN |
|
ZXMN10A08E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.5A SOT26 |
|
FDMS86310Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 17A/50A 8PQFN |
|
FQP7N80Rochester Electronics |
MOSFET N-CH 800V 6.6A TO220-3 |
|
IRL7472L1TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 375A DIRECTFET |
|
SUD35N10-26P-BE3Vishay / Siliconix |
MOSFET N-CH 100V 12A/35A DPAK |