English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB80N20M5STMicroelectronics |
MOSFET N-CH 200V 61A D2PAK |
|
NTMFS4C09NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 5DFN |
|
BSC017N04NSGATMA1Rochester Electronics |
MOSFET N-CH 40V 30A/100A TDSON |
|
DMP3068L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.3A SOT23 |
|
IRLML6302TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 780MA SOT23 |
|
IPB039N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 160A TO263-7 |
|
NTMFS4H013NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 43A/269A 5DFN |
|
NVMFS5C460NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A/78A 5DFN |
|
IXFR15N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A ISOPLUS247 |
|
CSD18536KCSTexas Instruments |
MOSFET N-CH 60V 200A TO220-3 |
|
STD2HNK60Z-1STMicroelectronics |
MOSFET N-CH 600V 2A IPAK |
|
BSC011N03LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 37A/100A TDSON |
|
NTD20N06-001Rochester Electronics |
MOSFET N-CH 60V 20A IPAK |
