类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 37.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.4mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16 nC @ 4.5 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 1290 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 19W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SC-70-6 Single |
包/箱: | PowerPAK® SC-70-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTB60N05HDLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STB31N65M5STMicroelectronics |
MOSFET N-CH 650V 22A D2PAK |
|
PMPB19XP,115Nexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
RDR005N25TLROHM Semiconductor |
MOSFET N-CH 250V 500MA TSMT3 |
|
FDP8D5N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A TO220-3 |
|
IXFX360N10TWickmann / Littelfuse |
MOSFET N-CH 100V 360A PLUS247-3 |
|
PMZB290UNE2YLNexperia |
MOSFET N-CH 20V 1.2A DFN1006B-3 |
|
FQA17N40Rochester Electronics |
MOSFET N-CH 400V 17.2A TO3P |
|
IPB80N04S3H4ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
2SK2485-ARochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SISS50DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 29.7A/108A PPAK |
|
FQB7N10TMRochester Electronics |
MOSFET N-CH 100V 7.3A D2PAK |
|
BSO303SPHXUMA1Rochester Electronics |
MOSFET P-CH 30V 7.2A DSO-8 |