English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 190mOhm @ 13.1A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 114 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.4 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3-1 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM3010S6Rectron USA |
MOSFET N-CHANNEL 30V 10A SOT23-6 |
|
SI7230DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
TN5335K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 110MA SOT23 |
|
FQAF13N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO3PF |
|
IPSA70R950CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 8.7A TO251-3 |
|
SI7852DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
|
FDMC8010Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/75A POWER33 |
|
BSR92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 140MA SC59 |
|
SIA810DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 4.5A PPAK SC70-6 |
|
BSS123WQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT323 |
|
IXTA16N50P-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
|
IRFR110PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IRFS7787PBFRochester Electronics |
MOSFET N-CH 75V 76A D2PAK |
