类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.8Ohm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16.5 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 705 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 107W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB18N60M2STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
|
IRF2907ZSPBFRochester Electronics |
MOSFET N-CH 75V 160A D2PAK |
|
SIA469DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK SC70-6 |
|
SI7326DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A PPAK 1212-8 |
|
IRFP244PBFVishay / Siliconix |
MOSFET N-CH 250V 15A TO247-3 |
|
STI57N65M5STMicroelectronics |
MOSFET N-CH 650V 42A I2PAK |
|
IRFI9634GPBFVishay / Siliconix |
MOSFET P-CH 250V 4.1A TO220-3 |
|
SI7430DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
|
BSS223PWH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 390MA SOT323-3 |
|
PMV50EPEARNexperia |
MOSFET P-CH 30V 4.2A TO236AB |
|
NVF2201NT1GRochester Electronics |
MOSFET N-CH 20V 300MA SC70-3 |
|
AOI950A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 5A TO251A |
|
XP234N0801TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 800MA SOT23 |