English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarHT™ HiPerFET™ |
| 包裹: | Box |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 74A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 34mOhm @ 37A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 107 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 480W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD (IXFH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2302A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 3A SOT23 |
|
IPD50N06S4L12ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-31 |
|
HUF75829D3Rochester Electronics |
MOSFET N-CH 150V 18A IPAK |
|
SSM3J332R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 6A SOT23F |
|
BSC098N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 60A TDSON |
|
PSMN015-60PS,127Nexperia |
MOSFET N-CH 60V 50A TO220AB |
|
STL225N6F7AGSTMicroelectronics |
MOSFET N-CH 60V 120A POWERFLAT |
|
SQJQ480E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 150A PPAK 8 X 8 |
|
IRFBC40SPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
DMN4010LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 11.5A PWRDI3333 |
|
DMNH10H028SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 55A TO252 |
|
IXTP12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO220 |
|
IXFA6N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO263 |
