







XTAL OSC VCXO 222.527472MHZ HCSL
MOSFET N-CH 20V 540MA SOT523
MOSFET N-CH 60V 30A TO220AB
MOSFET N-CH 200V 5A IPAK
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 50mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SIR186LDP-T1-RE3Vishay / Siliconix |
N-CHANNEL 60-V (D-S) MOSFET POWE |
|
|
RQ1E100XNTRROHM Semiconductor |
MOSFET N-CH 30V 10A TSMT8 |
|
|
NTLUS4C12NTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 6UDFN |
|
|
SI4174DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A 8SO |
|
|
FQA27N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 27A TO3PN |
|
|
IXFA12N65X2-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 12A TO263 |
|
|
HUFA75842S3SRochester Electronics |
MOSFET N-CH 150V 43A D2PAK |
|
|
YJQ40G10A-F1-1100HF |
N-CH MOSFET 100V 40A DFN3333-8L- |
|
|
CSD23280F3TTexas Instruments |
MOSFET P-CH 12V 1.8A 3PICOSTAR |
|
|
IPP062NE7N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
|
FQPF6N60CRochester Electronics |
MOSFET N-CH 600V 5.5A TO220F |
|
|
AON6576Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 26A/32A 8DFN |
|
|
STP75N75F4STMicroelectronics |
MOSFET N-CH 75V 78A TO220 |