English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 99mOhm @ 12.8A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.2mA |
| 栅极电荷 (qg) (max) @ vgs: | 127 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.78 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 278W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RTF010P02TLROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT3 |
|
IPD50N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A TO252-3 |
|
BSH205G2215Rochester Electronics |
P-CHANNEL MOSFET |
|
IPI126N10N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDF08N60ZGRochester Electronics |
MOSFET N-CH 600V 8.4A TO220FP |
|
DMP6023LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 6.6A 8SO |
|
IXFT50N30Q3Wickmann / Littelfuse |
MOSFET N-CH 300V 50A TO268 |
|
RQ5E015RPTLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3 |
|
NTLJS3A18PZTXGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
NTP6412ANGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 58A TO220AB |
|
IPU50R950CEAKMA1Rochester Electronics |
MOSFET N-CH 500V 4.3A TO251-3 |
|
DMT2004UFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |
|
NTR3A30PZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3A SOT23-3 |
