English
简体中文
CAP TANT 10UF 20% 16V 1411
MOSFET N-CH 650V 31A TO247-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 99mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.2mA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2800 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 255W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7606-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
FQB25N33TMRochester Electronics |
MOSFET N-CH 330V 25A D2PAK |
|
FDBL86063-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 240A 8HPSOF |
|
IXTT16N20D2Wickmann / Littelfuse |
MOSFET N-CH 200V 16A TO268 |
|
IXFT36N50PWickmann / Littelfuse |
MOSFET N-CH 500V 36A TO268 |
|
PSMN019-100YLXNexperia |
MOSFET N-CH 100V 56A LFPAK56 |
|
BUK964R1-40E,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
SQA405EJ-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 10A PPAK SC70-6 |
|
FQPF4N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 4A TO220F |
|
FCPF190N60-F152Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F |
|
IPW60R165CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO247-3 |
|
APT50M75JLLU3Roving Networks / Microchip Technology |
MOSFET N-CH 500V 51A SOT227 |
|
SIHH24N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 23A PPAK 8 X 8 |